N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXYS IXFH30N50Q3

RS Stock No.:: 801-1386
Distrelec Article No.:: 302-53-319
Mfr. Part No.:: IXFH30N50Q3
Manufacturer:: IXYS

N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXYS IXFH30N50Q3

Bulk discount available

Subtotal (1 unit)**

HK$94.90

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit
1 - 7	HK$94.90
8 - 14	HK$92.50
15 +	HK$91.10

**price indicative

RS Stock No.:: 801-1386
Distrelec Article No.:: 302-53-319
Mfr. Part No.:: IXFH30N50Q3
Manufacturer:: IXYS

IXFT30N50Q3, IXFH30N50Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	500 V
Package Type	TO-247
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	690 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	16.26mm
Typical Gate Charge @ Vgs	62 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	5.3mm
Transistor Material	Si
Height	16.26mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXYS IXFH30N50Q3

FREE delivery for orders over HK$850.00

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series