Nexperia BSS123 Type N-Channel MOSFET, 150 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123,215
- RS Stock No.:
- 792-0885
- Mfr. Part No.:
- BSS123,215
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 100 units)*
HK$56.80
FREE delivery for orders over HK$250.00
In Stock
- Plus 3,800 unit(s) shipping from 26 January 2026
- Plus 18,400 unit(s) shipping from 02 February 2026
- Plus 3,000 unit(s) shipping from 04 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 100 - 700 | HK$0.568 | HK$56.80 |
| 800 - 1400 | HK$0.557 | HK$55.70 |
| 1500 + | HK$0.547 | HK$54.70 |
*price indicative
- RS Stock No.:
- 792-0885
- Mfr. Part No.:
- BSS123,215
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | BSS123 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series BSS123 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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