N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

RS Stock No.:: 787-9399
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

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Price Each (In a Pack of 10)**

HK$6.59

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FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
10 - 740	HK$6.59	HK$65.90
750 - 1490	HK$6.43	HK$64.30
1500 +	HK$6.33	HK$63.30

**price indicative

RS Stock No.:: 787-9399
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

SiS892ADN, N-Channel 100V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	12.8 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	3.4mm
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor