Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23 SI2333DDS-T1-GE3
- RS Stock No.:
- 787-9222
- Distrelec Article No.:
- 304-02-277
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 10 units)*
HK$26.30
FREE delivery for orders over HK$250.00
Last RS stock
- 270 left, ready to ship from another location
- Final 41,590 unit(s) shipping from 06 March 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | HK$2.63 | HK$26.30 |
*price indicative
- RS Stock No.:
- 787-9222
- Distrelec Article No.:
- 304-02-277
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | Si2333DDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series Si2333DDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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