onsemi NTK Type P-Channel MOSFET, 6.7 A, 20 V Enhancement, 8-Pin ChipFET NTHS4101PT1G
- RS Stock No.:
- 780-0595
- Mfr. Part No.:
- NTHS4101PT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$36.00
FREE delivery for orders over HK$250.00
Last RS stock
- Final 2,950 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | HK$3.60 | HK$36.00 |
| 750 - 1490 | HK$3.51 | HK$35.10 |
| 1500 + | HK$3.45 | HK$34.50 |
*price indicative
- RS Stock No.:
- 780-0595
- Mfr. Part No.:
- NTHS4101PT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | ChipFET | |
| Series | NTK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Length | 3.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type ChipFET | ||
Series NTK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Length 3.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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