STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220 STP9NK60ZFP
- RS Stock No.:
- 761-0207
- Mfr. Part No.:
- STP9NK60ZFP
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$53.80
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 125 unit(s) shipping from 05 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | HK$10.76 | HK$53.80 |
| 15 - 20 | HK$10.50 | HK$52.50 |
| 25 + | HK$10.34 | HK$51.70 |
*price indicative
- RS Stock No.:
- 761-0207
- Mfr. Part No.:
- STP9NK60ZFP
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP9NK60Z
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R210CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- ROHM R6007END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6007END3TL1