Toshiba Type N-Channel MOSFET, 15 A, 200 V Enhancement, 3-Pin SC-67 TK15A20D,S4X(S
- RS Stock No.:
- 756-3375
- Mfr. Part No.:
- TK15A20D,S4X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$57.50
Add 25 units to get free delivery
In Stock
- 20 unit(s) ready to ship from another location
- Plus 85 unit(s) shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$11.50 | HK$57.50 |
| 25 - 95 | HK$11.26 | HK$56.30 |
| 100 - 245 | HK$11.04 | HK$55.20 |
| 250 - 495 | HK$10.80 | HK$54.00 |
| 500 + | HK$10.56 | HK$52.80 |
*price indicative
- RS Stock No.:
- 756-3375
- Mfr. Part No.:
- TK15A20D,S4X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SC-67 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10mm | |
| Width | 15 mm | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SC-67 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10mm | ||
Width 15 mm | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba Type N-Channel MOSFET 250 V EnhancementS4X(S
- Toshiba Type N-Channel MOSFET 600 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 800 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba N-Channel MOSFET Transistor 600 V, 3-Pin SC-67 TK20A60T(Q)
- Toshiba Type N-Channel MOSFET 30 V EnhancementF)
- Toshiba Type N-Channel MOSFET 30 V EnhancementLF(T