N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3

RS Stock No.:: 710-3257
Mfr. Part No.:: SI2308BDS-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3

Bulk discount available

Price Each (In a Pack of 20)**

HK$3.105

160 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
20 - 740	HK$3.105	HK$62.10
760 - 1480	HK$3.05	HK$61.00
1500 +	HK$2.995	HK$59.90

**price indicative

RS Stock No.:: 710-3257
Mfr. Part No.:: SI2308BDS-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.9 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-23 (TO-236)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	156 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.09 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	4.5 nC @ 10 V
Transistor Material	Si
Width	1.4mm
Length	3.04mm
Height	1.02mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor