DiodesZetex ZXMN6A11G N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA
- RS Stock No.:
- 708-2526
- Mfr. Part No.:
- ZXMN6A11GTA
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
HK$55.40
FREE delivery for orders over HK$250.00
Last RS stock
- Final 8,930 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | HK$11.08 | HK$55.40 |
| 250 - 495 | HK$10.76 | HK$53.80 |
| 500 + | HK$10.62 | HK$53.10 |
*price indicative
- RS Stock No.:
- 708-2526
- Mfr. Part No.:
- ZXMN6A11GTA
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ZXMN6A11G | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ZXMN6A11G | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex ZXMN6A11G Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- DiodesZetex IntelliFET Type N-Channel MOSFET 70 V Enhancement, 4-Pin SOT-223
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- DiodesZetex Type N-Channel MOSFET 450 V Enhancement, 4-Pin SOT-223
- DiodesZetex IntelliFET Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- DiodesZetex ZXMN6A08G Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223