onsemi Type N-Channel MOSFET, 3.2 A, 20 V Enhancement, 3-Pin SOT-23 NTR4501NT1G
- RS Stock No.:
- 688-9146
- Mfr. Part No.:
- NTR4501NT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$4.70
FREE delivery for orders over HK$250.00
In Stock
- 332 unit(s) ready to ship from another location
- Plus 5,274 unit(s) shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 748 | HK$2.35 | HK$4.70 |
| 750 - 3748 | HK$2.30 | HK$4.60 |
| 3750 + | HK$1.90 | HK$3.80 |
*price indicative
- RS Stock No.:
- 688-9146
- Mfr. Part No.:
- NTR4501NT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
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