N-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK STMicroelectronics STB100NF04T4
- RS Stock No.:
- 687-5093
- Mfr. Part No.:
- STB100NF04T4
- Manufacturer:
- STMicroelectronics
Subtotal (1 pack of 2 units)**
HK$48.36
14 In stock for delivery within 3 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over HK$850.00
Units | Per unit | Per Pack** |
---|---|---|
2 + | HK$24.18 | HK$48.36 |
**price indicative
- RS Stock No.:
- 687-5093
- Mfr. Part No.:
- STB100NF04T4
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | D2PAK (TO-263) | |
Series | STripFET II | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
Transistor Material | Si | |
Width | 9.35mm | |
Length | 10.4mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Height | 4.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Series STripFET II | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.35mm | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||