Vishay IRFZ48R Type N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS Stock No.:
- 281-6035
- Distrelec Article No.:
- 171-17-666
- Mfr. Part No.:
- IRFZ48RPBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 1000 units)*
HK$10,957.00
FREE delivery for orders over HK$250.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 1000 - 1000 | HK$10.957 | HK$10,957.00 |
| 2000 - 4000 | HK$10.135 | HK$10,135.00 |
| 5000 + | HK$9.423 | HK$9,423.00 |
*price indicative
- RS Stock No.:
- 281-6035
- Distrelec Article No.:
- 171-17-666
- Mfr. Part No.:
- IRFZ48RPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ48R | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ48R | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRFZ48R Series Power MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IRFZ48RPBF
This power MOSFET is a through-hole N-channel transistor intended for switching and power-management roles in industrial and commercial electronics. Designed to operate across a wide temperature range, it suits demanding environments where high current handling and robust thermal performance are required. The device incorporates enhancement-mode channel control for efficient conduction in power circuits.
Features and Benefits:
• Low on-resistance 0.018Ω reduces conduction losses
• High continuous drain current 50A supports heavy loads
• Maximum power dissipation 190W enables high-power operation
• Maximum drain-source voltage 60V allows medium-voltage systems
• Typical gate charge 110nC facilitates predictable switching behaviour
• Gate-source rating 20V offers standard gate-drive compatibility
• High continuous drain current 50A supports heavy loads
• Maximum power dissipation 190W enables high-power operation
• Maximum drain-source voltage 60V allows medium-voltage systems
• Typical gate charge 110nC facilitates predictable switching behaviour
• Gate-source rating 20V offers standard gate-drive compatibility
Applications
• Used for motor-drive stages in industrial controllers
• Suitable for DC-DC converters and power supplies
• Ideal for switch-mode power amplification circuits
• Can be used for battery management and protection systems
• Used with heat-sink assemblies in high-power modules
• Suitable for DC-DC converters and power supplies
• Ideal for switch-mode power amplification circuits
• Can be used for battery management and protection systems
• Used with heat-sink assemblies in high-power modules
What mounting method does it require for assembly?
It is supplied in a TO-220AB package configured for through-hole mounting and common heatsink attachment.
How does it perform in extreme ambient temperatures?
The device is specified to operate from -55°C up to 175°C, allowing use in harsh thermal conditions without derating of basic functionality.
What gate-drive considerations are recommended?
The maximum gate-source voltage is 20V
designers should limit drive amplitude accordingly and account for the 110nC typical gate charge when sizing gate drivers.
How should thermal management be approached in high-power designs?
With a 190W maximum power dissipation rating, implement adequate heatsinking and thermal interface materials and consider PCB thermal vias to maintain junction temperatures within limits.
Related links
- Vishay IRFZ48R Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ34PBF
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ24PBF
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB IRFZ44RPBF
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- Infineon HEXFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ44EPBF