Vishay SQ Type N-Channel MOSFET, 8 A, 30 V Enhancement, 3-Pin SOT-23 SQ2348CES-T1_GE3
- RS Stock No.:
- 280-0011
- Mfr. Part No.:
- SQ2348CES-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$71.00
FREE delivery for orders over HK$250.00
In Stock
- 775 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$2.84 | HK$71.00 |
| 50 - 75 | HK$2.784 | HK$69.60 |
| 100 - 225 | HK$2.528 | HK$63.20 |
| 250 - 975 | HK$2.476 | HK$61.90 |
| 1000 + | HK$2.432 | HK$60.80 |
*price indicative
- RS Stock No.:
- 280-0011
- Mfr. Part No.:
- SQ2348CES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.042Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.81V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.042Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.81V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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