Vishay SIS N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3
- RS Stock No.:
- 279-9975
- Mfr. Part No.:
- SIS4634LDN-T1-GE3
- Manufacturer:
- Vishay
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | HK$5.73 | HK$57.30 | - |
| 50 - 90 | HK$4.29 | HK$42.90 | HK$72.00 |
| 100 - 240 | HK$3.82 | HK$38.20 | HK$191.00 |
| 250 - 990 | HK$3.76 | HK$37.60 | HK$492.50 |
| 1000 + | HK$3.69 | HK$36.90 | HK$2,040.00 |
*price indicative
- RS Stock No.:
- 279-9975
- Mfr. Part No.:
- SIS4634LDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | 1212-8 | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.029Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19.8W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type 1212-8 | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.029Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19.8W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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