Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3
- RS Stock No.:
- 279-9929
- Mfr. Part No.:
- SIHR080N60E-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
HK$57.60
FREE delivery for orders over HK$250.00
- Plus 1,964 unit(s) shipping from 27 July 2026
Units | Per unit |
|---|---|
| 1 - 49 | HK$57.60 |
| 50 - 99 | HK$43.20 |
| 100 - 249 | HK$38.30 |
| 250 - 999 | HK$37.60 |
| 1000 + | HK$36.80 |
*price indicative
- RS Stock No.:
- 279-9929
- Mfr. Part No.:
- SIHR080N60E-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | 8x8LR | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type 8x8LR | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3
Features and Benefits:
• 51A continuous current handling for heavy loads
• 0.084Ω low Rds(on) to reduce conduction losses
• 500W power dissipation for thermal headroom
• 63nC typical gate charge for predictable switching behaviour
• 30V gate maximum to accommodate common drive voltages
Applications
• Ideal for high-voltage power supplies and converters
• Used for DC-DC conversion in automation equipment
• Can be used for switching stages in power management systems
• Used with high-temperature assemblies in harsh environments
What temperature range can the device tolerate during operation?
How is the device packaged for PCB assembly?
What gate drive considerations should be observed?
How does switching behaviour impact thermal management?
Related links
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin 8x8LR
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- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
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