Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- RS Stock No.:
- 279-9914
- Mfr. Part No.:
- SIHH150N60E-T1-GE3
- Manufacturer:
- Vishay
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Units | Per unit |
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| 1 - 49 | HK$51.80 |
| 50 - 99 | HK$50.70 |
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| 250 - 999 | HK$48.70 |
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- RS Stock No.:
- 279-9914
- Mfr. Part No.:
- SIHH150N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIHH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIHH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
Vishay SIHH Series MOSFET, 600V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHH150N60E-T1-GE3
This MOSFET is a high-voltage N-channel device designed for power switching in surface-mount assemblies. It operates over a wide temperature span and supports substantial continuous current, making it suitable for demanding electronic systems that require robust voltage handling and thermal endurance.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 19A continuous drain current supports significant load currents
• 0.158 Ω low on-resistance reduces conduction losses
• 156W power dissipation allows elevated thermal loading
• 36 nC gate charge provides predictable switching performance
• Vgs 30V gate limit offers gate overvoltage protection
• 19A continuous drain current supports significant load currents
• 0.158 Ω low on-resistance reduces conduction losses
• 156W power dissipation allows elevated thermal loading
• 36 nC gate charge provides predictable switching performance
• Vgs 30V gate limit offers gate overvoltage protection
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring strong current capability
• Can be used for rugged power switching in telecoms systems
• Suitable for compact surface-mount power modules
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring strong current capability
• Can be used for rugged power switching in telecoms systems
• Suitable for compact surface-mount power modules
What thermal conditions can it withstand during operation?
It is rated for operation from -55 °C up to 150 °C, allowing use in environments with extreme temperature ranges.
What mounting type is required for PCB integration?
It is supplied in a PowerPAK 8x8 surface-mount package intended for direct PCB soldering.
How many electrical connections does the component provide?
The device has a four-pin configuration to interface with gate, drain and source layout requirements.
What channel conduction mode does it use for switching?
It is an enhancement-mode N-channel device, conducting when a positive gate-source voltage is applied.
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