Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- RS Stock No.:
- 279-9906
- Mfr. Part No.:
- SIHF074N65E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$2,371.30
FREE delivery for orders over HK$250.00
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$47.426 | HK$2,371.30 |
| 100 + | HK$42.156 | HK$2,107.80 |
*price indicative
- RS Stock No.:
- 279-9906
- Mfr. Part No.:
- SIHF074N65E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | SIHF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.079Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series SIHF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.079Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHF Series MOSFET, 650V Maximum Drain Source Voltage, 14A Maximum Continuous Drain Current - SIHF074N65E-GE3
This MOSFET is a high-voltage N-channel power transistor designed for through-hole mounting in power-management and switching environments. It operates across an extended temperature range and is intended for applications requiring substantial voltage handling and moderate current capacity while conforming to RoHS restrictions.
Features and Benefits:
• 650V drain rating enables high-voltage switching capabilities
• 14A continuous drain current supports sustained power delivery
• 0.079Ω Rds(on) reduces conduction losses during operation
• 39W power dissipation allows for elevated heat throughput
• 8nC typical gate charge ensures responsive switching behaviour
• 30V gate tolerance permits wide drive voltage margin
• 14A continuous drain current supports sustained power delivery
• 0.079Ω Rds(on) reduces conduction losses during operation
• 39W power dissipation allows for elevated heat throughput
• 8nC typical gate charge ensures responsive switching behaviour
• 30V gate tolerance permits wide drive voltage margin
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converter topologies
• Can be used for renewable energy power conversion
• Suitable for power factor correction front-end circuits
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converter topologies
• Can be used for renewable energy power conversion
• Suitable for power factor correction front-end circuits
What thermal extremes can this device tolerate in operation?
It is rated to operate from -55°C up to 150°C allowing use in harsh thermal environments where wide temperature resilience is required.
Which mounting approach is required for installation?
The component utilises a through-hole TO-220 package intended for PCB mounting with a standard heatsinking option for improved thermal management.
How does the gate characteristic affect switching design?
A typical gate charge of 8nC at the specified gate drive level informs gate driver selection to balance switching speed against drive power consumption.
Are there limitations on gate drive voltage to avoid damage?
The device accepts gate-to-source voltages up to 30V, so designs must ensure drive circuits do not exceed this threshold.
Related links
- Vishay SIHF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1
- onsemi FCB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 FCB199N65S3
- onsemi FCB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3 IPP65R190CFD7AAKSA1