Infineon BSR202N N-Channel MOSFET, 3.8 A, 20 V Enhancement, 3-Pin PG-SC-59
- RS Stock No.:
- 273-7311
- Distrelec Article No.:
- 304-41-650
- Mfr. Part No.:
- BSR202NL6327HTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
HK$117.00
FREE delivery for orders over HK$250.00
Being discontinued
- Final 475 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$4.68 | HK$117.00 |
| 50 - 75 | HK$4.584 | HK$114.60 |
| 100 - 225 | HK$4.296 | HK$107.40 |
| 250 - 975 | HK$3.952 | HK$98.80 |
| 1000 + | HK$3.864 | HK$96.60 |
*price indicative
- RS Stock No.:
- 273-7311
- Distrelec Article No.:
- 304-41-650
- Mfr. Part No.:
- BSR202NL6327HTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PG-SC-59 | |
| Series | BSR202N | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 900μm | |
| Length | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PG-SC-59 | ||
Series BSR202N | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Standards/Approvals RoHS Compliant | ||
Width 900μm | ||
Length 1.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a N channel small signal MOSFET that meet and exceed the highest quality requirements in well known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
Qualified according to AEC Q101
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