Infineon IPD N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1
- RS Stock No.:
- 273-3004
- Mfr. Part No.:
- IPD079N06L3GATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
HK$82.80
FREE delivery for orders over HK$250.00
In Stock
- 2,285 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$16.56 | HK$82.80 |
| 50 - 95 | HK$12.76 | HK$63.80 |
| 100 - 245 | HK$11.82 | HK$59.10 |
| 250 - 995 | HK$11.58 | HK$57.90 |
| 1000 + | HK$11.40 | HK$57.00 |
*price indicative
- RS Stock No.:
- 273-3004
- Mfr. Part No.:
- IPD079N06L3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.223mm | |
| Length | 10.48mm | |
| Standards/Approvals | RoHS | |
| Width | 6.731mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.50mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.223mm | ||
Length 10.48mm | ||
Standards/Approvals RoHS | ||
Width 6.731mm | ||
Automotive Standard No | ||
Infineon IPD Series MOSFET, 60V Maximum Drain-Source Voltage, 50A Maximum Continuous Drain Current - IPD079N06L3GATMA1
This MOSFET is a three‑pin, N‑channel enhancement device engineered for switching and power regulation tasks. It operates across a wide temperature range and is supplied in a TO‑252 through‑hole package, making it suitable for applications where robust thermal tolerance and conventional mounting are required.
Features and Benefits:
• 13.5mΩ low Rds(on) for reduced conduction losses
• 60V Vds rating enabling moderate‑voltage power switching
• 50A continuous current handling for high‑current circuits
• 50 nC typical gate charge for predictable gate‑drive demands
• -55 to 175°C operating range for extended temperature resilience
• 60V Vds rating enabling moderate‑voltage power switching
• 50A continuous current handling for high‑current circuits
• 50 nC typical gate charge for predictable gate‑drive demands
• -55 to 175°C operating range for extended temperature resilience
Applications
• Used for high‑current DC motor control circuits
• Suitable for power distribution in industrial controllers
• Ideal for switch‑mode power supply output stages
• Can be used for battery management and load switching
• Used with gate drivers in inverter front‑end stages
• Suitable for power distribution in industrial controllers
• Ideal for switch‑mode power supply output stages
• Can be used for battery management and load switching
• Used with gate drivers in inverter front‑end stages
What gate voltage margin is permissible for safe operation?
The device accepts up to 20V between gate and source as its maximum gate-source voltage.
How does the package affect mounting and cooling options?
The TO‑252 through‑hole package provides a conventional mounting method and allows heat‑sinking considerations on compatible boards.
What environmental extremes can it withstand during operation?
It is rated to operate down to -55°C and up to 175°C ambient temperature.
Is the device specified for automotive standard compliance?
It is not designated as meeting automotive‑standard certification.
Does it conform to environmental substance restrictions?
It carries RoHS approval, indicating restriction of certain hazardous substances.
Related links
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1
- Infineon IPD Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1
- Infineon IPD Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD048N06L3GATMA1