Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

HK$12,447.50

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Units
Per unit
Per Reel*
2500 - 2500HK$4.979HK$12,447.50
5000 - 5000HK$4.88HK$12,200.00
7500 +HK$4.782HK$11,955.00

*price indicative

RS Stock No.:
258-3848
Mfr. Part No.:
IPD60N10S412ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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