Infineon OptiMOS N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1
- RS Stock No.:
- 273-2786
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Manufacturer:
- Infineon
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- 80 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$17.10 | HK$85.50 |
| 50 - 95 | HK$16.58 | HK$82.90 |
| 100 - 245 | HK$16.10 | HK$80.50 |
| 250 - 995 | HK$15.60 | HK$78.00 |
| 1000 + | HK$15.14 | HK$75.70 |
*price indicative
- RS Stock No.:
- 273-2786
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 52W Power Dissipation, 950V Drain-Source Voltage - IPD95R1K2P7ATMA1
This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching in demanding temperature ranges. It operates as an enhancement-mode device suitable for applications that require a balance of voltage withstand capability and moderate continuous current. The component is supplied in a PG-TO252-3 package and conforms to RoHS environmental restrictions.
Features and Benefits:
• 950V drain-source capability allowing high-voltage switching
• 6A continuous drain current supporting medium-power loads
• 52W power dissipation for thermal handling in converters
• 1.2Ω RDS(on) minimising conduction losses at low frequencies
• 15nC typical gate charge enabling controlled switching transitions
• 6A continuous drain current supporting medium-power loads
• 52W power dissipation for thermal handling in converters
• 1.2Ω RDS(on) minimising conduction losses at low frequencies
• 15nC typical gate charge enabling controlled switching transitions
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for low-frequency switching in industrial supplies
• Used with surface-mount boards requiring Compact power devices
• Can be used for systems operating from -55°C to 150°C
• Used for discrete switching stages in power management
• Ideal for low-frequency switching in industrial supplies
• Used with surface-mount boards requiring Compact power devices
• Can be used for systems operating from -55°C to 150°C
• Used for discrete switching stages in power management
What gate voltage limits must be observed for correct operation?
The gate must not exceed ±20V relative to the source to prevent electrical overstress.
How does the device perform across temperature extremes?
It maintains specified operation from -55°C up to 150°C, enabling a wide thermal margin for harsh environments.
What package and mounting method does it use?
It is supplied in a PG-TO252-3 package intended for surface mounting to provide Compact PCB integration.
Is this component suitable for automotive standard compliance?
It is not specified as meeting automotive-grade standards and should not be assumed to be compliant.
Related links
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