Infineon CoolGaN Power Transistor, 15 A, 600 V Enhancement, 8-Pin PG-LSON-8-1
- RS Stock No.:
- 273-2750
- Mfr. Part No.:
- IGLD60R070D1AUMA3
- Manufacturer:
- Infineon
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- RS Stock No.:
- 273-2750
- Mfr. Part No.:
- IGLD60R070D1AUMA3
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolGaN | |
| Package Type | PG-LSON-8-1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolGaN | ||
Package Type PG-LSON-8-1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -10V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.
Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge
Related links
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