Vishay SQJ N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- RS Stock No.:
- 268-8364
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 268-8364
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQJ | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 135W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Series SQJ | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 135W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 4.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.
AEC Q101 qualified
ROHS compliant
UIS tested 100 percent
Related links
- Vishay SQJ Type N-Channel MOSFET 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- Vishay SQJ Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK SO-8L SQJ154EP-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ181ELP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742EP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742ELP-T1_GE3
