Vishay SIHK N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

RS Stock No.:: 268-8316
Mfr. Part No.:: SIHK185N60EF-T1GE3
Manufacturer:: Vishay

Vishay SIHK N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

The image is for reference only, please refer to product details and specifications

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 268-8316
Mfr. Part No.:: SIHK185N60EF-T1GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.193Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	114W
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.193Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 114W
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK185N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHK185N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in PCB-mounted assemblies. It operates across a wide temperature span and complies with RoHS standards, making it suitable for industrial electronic systems requiring elevated voltage handling and thermal resilience.

Features and Benefits:

• 650V drain rating enabling high-voltage switching capability
• 16A continuous drain current supporting substantial load currents
• 114W power dissipation permitting sustained power handling
• 0.193Ω Rds(on) reducing conduction losses under load
• 32nC typical gate charge allowing predictable switching performance
• 30V maximum gate-source voltage providing robust gate tolerance

Applications

• Suitable for switching power supplies in high-voltage designs
• Ideal for industrial motor drives and inverter stages
• Used with renewable energy converters handling elevated voltages
• Can be used for power factor correction circuits on PCBs
• Suitable for general high-power transistor replacement in assemblies

What thermal range can it tolerate in demanding environments?

It is specified to operate from -55°C up to 150°C, accommodating both low-temperature storage and high-temperature operating conditions.

What mounting style does it require for PCB integration?

The device is supplied in a PowerPAK 10x12 package intended for PCB mounting to facilitate low-inductance connections and compact layouts.

How many pins are available for connection and grounding schemes?

It uses an 8-pin configuration which allows separation of gate, drain and source connections for flexible board routing.

Is it suitable for automotive-specific standards?

It is not classified to automotive standards and should be evaluated against vehicle-specific requirements before use.