Vishay SIHB N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- RS Stock No.:
- 268-8293
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save 10%
View bulk pricing optionsSubtotal (1 pack of 2 units)*
HK$111.90
FREE delivery for orders over HK$250.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 8 | HK$55.95 | HK$111.90 | - |
| 10 - 18 | HK$50.35 | HK$100.70 | 10% |
| 20 - 98 | HK$49.25 | HK$98.50 | 11% |
| 100 - 498 | HK$41.20 | HK$82.40 | 26% |
| 500 + | HK$40.25 | HK$80.50 | 28% |
*price indicative
- RS Stock No.:
- 268-8293
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHB Series MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHB085N60EF-GE3
This MOSFET is a high-voltage N-channel semiconductor device designed for power switching in surface-mount applications. It operates across a wide ambient temperature range and is suited to circuits requiring substantial drain current and elevated drain-source voltage capability. The component is supplied in a TO-263 package for thermal management on PCB-mounted power stages.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 34A continuous drain current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 63nC total gate charge allows predictable gate-drive design
• 184W power dissipation assists high-power-density layouts
• Vgs 30V limit accommodates robust gate-voltage margins
• 34A continuous drain current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 63nC total gate charge allows predictable gate-drive design
• 184W power dissipation assists high-power-density layouts
• Vgs 30V limit accommodates robust gate-voltage margins
Applications
• Ideal for power converters in industrial supplies
• Suitable for high-voltage inverter switching stages
• Used for motor-drive front-end switching transistors
• Can be used for telecoms power-rail regulation
• Recommended for switched-mode power supply primary switches
• Suitable for high-voltage inverter switching stages
• Used for motor-drive front-end switching transistors
• Can be used for telecoms power-rail regulation
• Recommended for switched-mode power supply primary switches
What package advantages assist PCB thermal design?
The TO-263 surface-mount format offers a large thermal pad and metal tab area to improve heat transfer to the board and external heatsinking arrangements.
How does gate charge affect drive circuitry selection?
The 63nC gate charge determines required driver current and switching losses
gate drivers must source and sink sufficient current for desired transition speeds to balance efficiency and EMI.
What temperature range can it withstand during operation?
The device is specified to operate from -55°C up to 150°C junction or ambient conditions as defined by system cooling, enabling use in harsh thermal environments.
Are there any regulatory restrictions noted for use?
The component complies with RoHS directives, indicating it meets restricted-substance requirements for electronic assemblies.
Related links
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- IXYS HiperFET 34 A 3-Pin TO-247 IXFH34N65X2
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SPW35N60C3FKSA1
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247