ROHM RD3R02BBH Type N-Channel MOSFET, 50 A, 6 V Enhancement, 3-Pin TO-252 RD3R02BBHTL1
- RS Stock No.:
- 266-3852
- Mfr. Part No.:
- RD3R02BBHTL1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$77.30
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 13 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$15.46 | HK$77.30 |
| 50 - 95 | HK$13.90 | HK$69.50 |
| 100 - 245 | HK$11.10 | HK$55.50 |
| 250 - 995 | HK$10.86 | HK$54.30 |
| 1000 + | HK$7.56 | HK$37.80 |
*price indicative
- RS Stock No.:
- 266-3852
- Mfr. Part No.:
- RD3R02BBHTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 6V | |
| Series | RD3R02BBH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 81mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 6V | ||
Series RD3R02BBH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 81mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power package, suitable for switching.
Pb free plating
RoHS compliant
Halogen free
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