ROHM RD3G500GN Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 RD3G500GNTL

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Subtotal (1 pack of 25 units)*

HK$259.60

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Units
Per unit
Per Pack*
25 - 225HK$10.384HK$259.60
250 - 475HK$10.196HK$254.90
500 - 975HK$10.012HK$250.30
1000 - 1975HK$9.832HK$245.80
2000 +HK$9.656HK$241.40

*price indicative

RS Stock No.:
172-0437
Mfr. Part No.:
RD3G500GNTL
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

RD3G500GN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

31nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

35W

Maximum Operating Temperature

150°C

Height

2.3mm

Standards/Approvals

JEDEC JESD22-A114, JEDEC JESD22-C101, JEITA ED-4701/302

Length

6.8mm

Width

6.4 mm

Automotive Standard

No

RD3G500GN is the low on - resistance MOSFET for switching application.

Low on - resistance

High power package (TO-252)

Pb-free lead plating

Halogen free

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