ROHM RD3P100SN Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 RD3P100SNTL1
- RS Stock No.:
- 264-3813
- Mfr. Part No.:
- RD3P100SNTL1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$58.20
FREE delivery for orders over HK$250.00
In Stock
- 2,375 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$11.64 | HK$58.20 |
| 50 - 95 | HK$10.42 | HK$52.10 |
| 100 - 245 | HK$8.16 | HK$40.80 |
| 250 - 995 | HK$8.00 | HK$40.00 |
| 1000 + | HK$5.28 | HK$26.40 |
*price indicative
- RS Stock No.:
- 264-3813
- Mfr. Part No.:
- RD3P100SNTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P100SN | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 20W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P100SN | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 20W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM power MOSFET with low on resistance, suitable for switching, it is drive circuits can be simple and Pb-free plating and RoHS compliant.
Fast switching speed
Parallel use is easy
Related links
- ROHM RD3P100SN Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RD3P100SN N-Channel MOSFET 100 V, 3-Pin DPAK RD3P100SNTL1
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 FQD13N10TM
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 FQD13N10LTM
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6010YND3TL1
- Infineon LogicFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL520NPBF
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252