Infineon HEXFET Type N-Channel MOSFET, 56 A, 200 V Enhancement, 3-Pin TO-220 IRFB260NPBF

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HK$96.40

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Units
Per unit
Per Pack*
5 - 45HK$19.28HK$96.40
50 - 95HK$15.00HK$75.00
100 - 245HK$13.50HK$67.50
250 - 495HK$13.24HK$66.20
500 +HK$12.26HK$61.30

*price indicative

Packaging Options:
RS Stock No.:
262-6746
Distrelec Article No.:
304-41-671
Mfr. Part No.:
IRFB260NPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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