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    N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

    RS Stock No.:
    913-3932
    Mfr. Part No.:
    IRFB4227PBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
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    units

    Added

    Price Each (In a Tube of 50)

    HK$26.955

    unitsPer unitPer Tube*
    50 - 50HK$26.955HK$1,347.75
    100 - 150HK$26.369HK$1,318.45
    200 +HK$25.783HK$1,289.15
    *price indicative
    RS Stock No.:
    913-3932
    Mfr. Part No.:
    IRFB4227PBF
    Manufacturer:
    Infineon
    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    COO (Country of Origin):
    CN

    Product Details

    Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


    Motor Control MOSFET


    Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

    Synchronous Rectifier MOSFET


    A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

    For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current65 A
    Maximum Drain Source Voltage200 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance24 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage5V
    Minimum Gate Threshold Voltage3V
    Maximum Power Dissipation330 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-30 V, +30 V
    Length10.66mm
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    Width4.82mm
    Number of Elements per Chip1
    Typical Gate Charge @ Vgs70 nC @ 10 V
    Minimum Operating Temperature-40 °C
    Height9.02mm
    SeriesHEXFET
    Stock check temporarily unavailable - call for stock availability
    Add to Basket
    units

    Added

    Price Each (In a Tube of 50)

    HK$26.955

    unitsPer unitPer Tube*
    50 - 50HK$26.955HK$1,347.75
    100 - 150HK$26.369HK$1,318.45
    200 +HK$25.783HK$1,289.15
    *price indicative