N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF
- RS Stock No.:
- 913-3932
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
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Price Each (In a Tube of 50)
HK$26.955
| units | Per unit | Per Tube* |
| 50 - 50 | HK$26.955 | HK$1,347.75 |
| 100 - 150 | HK$26.369 | HK$1,318.45 |
| 200 + | HK$25.783 | HK$1,289.15 |
| *price indicative | ||
- RS Stock No.:
- 913-3932
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
- COO (Country of Origin):
- CN
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 330 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 10.66mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Width | 4.82mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Minimum Operating Temperature | -40 °C |
| Height | 9.02mm |
| Series | HEXFET |