Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8

The image is for reference only, please refer to product details and specifications

Subtotal (1 reel of 4000 units)*

HK$10,028.00

Add to Basket
Select or type quantity
In Stock
  • Plus 4,000 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +HK$2.507HK$10,028.00

*price indicative

RS Stock No.:
262-6735
Mfr. Part No.:
IRF7465TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

1.75mm

Length

5mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

Related links