Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 4000 units)*

HK$12,084.00

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
4000 - 16000HK$3.021HK$12,084.00
20000 +HK$2.961HK$11,844.00

*price indicative

RS Stock No.:
217-2606
Mfr. Part No.:
IRF7469TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

4.9mm

Standards/Approvals

No

Width

3.9 mm

Height

1.75mm

Automotive Standard

No

The Infineon 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package.

Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

Related links