Infineon IPT N-Channel MOSFET, 315 A, 100 V Enhancement HSOF IPT015N10NF2SATMA1
- RS Stock No.:
- 259-2647
- Mfr. Part No.:
- IPT015N10NF2SATMA1
- Manufacturer:
- Infineon
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| 1 - 9 | HK$48.30 |
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- RS Stock No.:
- 259-2647
- Mfr. Part No.:
- IPT015N10NF2SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 315A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPT | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.50mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 315A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPT | ||
Package Type HSOF | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.50mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 100V Drain-Source Voltage, 315A Continuous Drain Current - IPT015N10NF2SATMA1
This MOSFET is a high-power N-channel transistor designed for surface-mount applications where robust switching and wide temperature endurance are required. It operates across an extensive temperature range and is intended for systems demanding substantial continuous current handling while maintaining low conduction losses. The device is supplied in a heat-sinking HSOF package suitable for high-current board-level integration.
Features and Benefits:
• 1.50mΩ Rds(on) enabling reduced conduction losses
• 315A continuous drain current supporting heavy loads
• 100V Vds permitting higher-voltage switching duties
• 1.2V forward voltage improving conduction efficiency
• -55°C to +175°C operational range enabling harsh environments
• 315A continuous drain current supporting heavy loads
• 100V Vds permitting higher-voltage switching duties
• 1.2V forward voltage improving conduction efficiency
• -55°C to +175°C operational range enabling harsh environments
Applications
• Suitable for high-current motor drive stages
• Ideal for DC-DC converters in power racks
• Used with power distribution assemblies on boards
• Can be used for high-power switching in industrial systems
• Suitable for Compact heat-sinked surface-mount layouts
• Ideal for DC-DC converters in power racks
• Used with power distribution assemblies on boards
• Can be used for high-power switching in industrial systems
• Suitable for Compact heat-sinked surface-mount layouts
What package type is used for thermal dissipation?
It is provided in an HSOF package designed for enhanced heat transfer to external sinks.
Which mounting method is recommended for PCB assembly?
The device is intended for surface mounting to enable low-inductance board layout.
What channel conduction type does the device employ?
It uses an enhancement-mode N-channel configuration for controlled switching.
Is the product suitable for automotive standardisation?
It is not specified as meeting automotive standards but conforms to RoHS requirements.
Related links
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- Infineon IPT Type N-Channel MOSFET 80 V HSOF
- Infineon IPT Type N-Channel MOSFET 80 V HSOF
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