Infineon IPW MOSFET, 211 A, 650 V PG-TO-247
- RS Stock No.:
- 258-3916
- Mfr. Part No.:
- IPW65R050CFD7AXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
HK$1,310.01
FREE delivery for orders over HK$250.00
In Stock
- Plus 210 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | HK$43.667 | HK$1,310.01 |
| 60 - 60 | HK$42.357 | HK$1,270.71 |
| 90 + | HK$41.087 | HK$1,232.61 |
*price indicative
- RS Stock No.:
- 258-3916
- Mfr. Part No.:
- IPW65R050CFD7AXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 211A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 211A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS N-channel automotive SJ power MOSFET CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS CFD7A offers higher reliability and power density while increasing design flexibility.
Efficiency improvements in hard- and soft-switching topologies up to 98.4%
Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS CFDA
Scalable as designed for use in PFC and DC-DC stage
Granular portfolio available
Related links
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- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247
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- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
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- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
