Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
- RS Stock No.:
- 258-3854
- Mfr. Part No.:
- IPD60R280PFD7SAUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$25.60
FREE delivery for orders over HK$250.00
In Stock
- Plus 2,430 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$12.80 | HK$25.60 |
| 10 - 98 | HK$12.15 | HK$24.30 |
| 100 - 248 | HK$11.45 | HK$22.90 |
| 250 - 498 | HK$10.65 | HK$21.30 |
| 500 + | HK$9.80 | HK$19.60 |
*price indicative
- RS Stock No.:
- 258-3854
- Mfr. Part No.:
- IPD60R280PFD7SAUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Related links
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252 IPD60R2K0PFD7SAUMA1
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252 IRFR3410TRLPBF
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252 IPD60R600PFD7SAUMA1