Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement, 3-Pin TO-252 IRFR3410TRLPBF

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Subtotal (1 pack of 20 units)*

HK$148.50

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Units
Per unit
Per Pack*
20 - 740HK$7.425HK$148.50
760 - 1480HK$7.24HK$144.80
1500 +HK$7.135HK$142.70

*price indicative

Packaging Options:
RS Stock No.:
218-3106
Distrelec Article No.:
304-39-421
Mfr. Part No.:
IRFR3410TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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