Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- RS Stock No.:
- 258-3845
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$14.15 | HK$28.30 |
| 10 - 98 | HK$13.45 | HK$26.90 |
| 100 - 248 | HK$12.60 | HK$25.20 |
| 250 - 498 | HK$11.75 | HK$23.50 |
| 500 + | HK$10.80 | HK$21.60 |
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- RS Stock No.:
- 258-3845
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Drain-Source Voltage, 58W Power Dissipation - IPD50P04P4L11ATMA2
This MOSFET is a P-channel power transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide ambient range and is designed for demanding temperature environments, making it suitable for applications where thermal endurance and Compact packaging matter.
Features and Benefits:
• Low Rds(on) 10.6mΩ reduces conduction losses
• Continuous drain current -50A supports high-current loads
• Gate charge 45nC allows predictable switching energy
• Maximum Vgs 5V ensures safe gate drive limits
• TO-252 surface mount enables Compact board layouts
• Continuous drain current -50A supports high-current loads
• Gate charge 45nC allows predictable switching energy
• Maximum Vgs 5V ensures safe gate drive limits
• TO-252 surface mount enables Compact board layouts
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current polarity switching circuits
• Used with thermal management for extended-temperature systems
• Can be used for DC power control in vehicle electronics
• Ideal for high-current polarity switching circuits
• Used with thermal management for extended-temperature systems
• Can be used for DC power control in vehicle electronics
What temperature extremes can it withstand?
It is rated to operate from -55°C up to 175°C.
What packaging and mount type does it use?
It is supplied in a TO-252 package intended for surface mounting.
How does the device perform under high-power conditions?
It allows up to 58W dissipation, enabling sustained power handling with appropriate thermal management.
Are there limits for the drain-source voltage and gate drive?
The device specifies a maximum drain-source voltage of -40V and a maximum gate-source of 5V.
Related links
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