Infineon IPD N-Channel MOSFET, 30 A, 60 V N TO-252 IPD220N06L3GATMA1
- RS Stock No.:
- 258-3837
- Mfr. Part No.:
- IPD220N06L3GATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$12.10 | HK$60.50 |
| 10 - 95 | HK$11.56 | HK$57.80 |
| 100 - 245 | HK$10.80 | HK$54.00 |
| 250 - 495 | HK$10.06 | HK$50.30 |
| 500 + | HK$9.24 | HK$46.20 |
*price indicative
- RS Stock No.:
- 258-3837
- Mfr. Part No.:
- IPD220N06L3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 39.80mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 39.80mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IPD Series MOSFET, 60V Maximum Drain-Source Voltage, 30A Maximum Continuous Drain Current - IPD220N06L3GATMA1
This MOSFET is a surface‑mount N‑channel transistor designed for power switching in demanding thermal environments. It combines a moderate voltage rating with substantial continuous current capability, making it suitable for applications that need efficient conduction and Compact mounting. The device complies with RoHS standards and is offered in a TO‑252 package for straightforward PCB assembly.
Features and Benefits:
• 39.8mΩ RDS(on) delivering reduced conduction losses
• 1.2V forward voltage enabling efficient gate‑driven switching
• -55°C to +175°C operating range supporting wide temperature extremes
• 60V drain-source rating allowing robust voltage headroom
• 30A continuous drain current supporting high‑current loads
• 1.2V forward voltage enabling efficient gate‑driven switching
• -55°C to +175°C operating range supporting wide temperature extremes
• 60V drain-source rating allowing robust voltage headroom
• 30A continuous drain current supporting high‑current loads
Applications
• Suitable for DC power distribution modules
• Ideal for motor driver switching stages
• Used with battery management circuits requiring surface mounting
• Can be used for synchronous rectification in converters
• Suitable for high‑current load switching on Compact PCBs
• Ideal for motor driver switching stages
• Used with battery management circuits requiring surface mounting
• Can be used for synchronous rectification in converters
• Suitable for high‑current load switching on Compact PCBs
What package type is provided for PCB assembly?
The device is supplied in a TO‑252 surface‑mount package suited to reflow processes.
Which channel polarity does it employ for control circuits?
It uses an N‑channel configuration for low‑side or high‑side switching topologies depending on circuit design.
Is it intended for automotive qualification?
It is not designated as an automotive‑standard device but meets RoHS environmental requirements.
What mounting style is appropriate for this component?
The transistor is intended for surface mounting to permit low‑profile board layouts.
What is the maximum operating temperature specified?
The component is rated to operate up to +175°C.
Related links
- Infineon IPD Type N-Channel MOSFET 60 V N TO-252
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- Infineon IPD Type N-Channel MOSFET 100 V N TO-252
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252
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