Infineon IPA Type P-Channel MOSFET, 6.5 A, 600 V P, 3-Pin TO-263 IPA60R380P6XKSA1
- RS Stock No.:
- 258-3774
- Mfr. Part No.:
- IPA60R380P6XKSA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 8 | HK$20.70 | HK$41.40 | - |
| 10 - 18 | HK$19.55 | HK$39.10 | HK$11.50 |
| 20 - 28 | HK$18.45 | HK$36.90 | HK$45.00 |
| 30 - 38 | HK$17.15 | HK$34.30 | HK$106.50 |
| 40 + | HK$15.80 | HK$31.60 | HK$196.00 |
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- RS Stock No.:
- 258-3774
- Mfr. Part No.:
- IPA60R380P6XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPA | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPA | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is are volutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching application seven more efficient, more compact, lighter and cooler.
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS quality with over 12 years manufacturing experience in super junction technology
High robustness and better efficiency
Outstanding quality & reliability
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