Infineon BSZ Type P-Channel MOSFET, -40 A, -30 V P, 8-Pin TDSON BSZ120P03NS3GATMA1
- RS Stock No.:
- 258-0719
- Mfr. Part No.:
- BSZ120P03NS3GATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$9.06 | HK$45.30 |
| 10 - 95 | HK$8.60 | HK$43.00 |
| 100 - 245 | HK$8.10 | HK$40.50 |
| 250 - 495 | HK$7.52 | HK$37.60 |
| 500 + | HK$6.90 | HK$34.50 |
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- RS Stock No.:
- 258-0719
- Mfr. Part No.:
- BSZ120P03NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -40A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -40A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 30V Drain-Source Voltage, 40A Continuous Drain Current - BSZ120P03NS3GATMA1
This p-channel MOSFET is a surface-mount transistor designed for high-current switching in Compact assemblies. It operates across a wide temperature range and conforms to specified material and environmental standards, making it suitable for electronic applications that demand controlled power handling and Compact packaging.
Features and Benefits:
• Low Rds(on)12mΩ reduces conduction losses and improves efficiency
• 52W power dissipation enables higher thermal throughput
• 30nC gate charge supports Faster switching performance
• ±25V gate tolerance allows flexible gate-drive designs
• Surface TDSON package facilitates dense board layout
• 52W power dissipation enables higher thermal throughput
• 30nC gate charge supports Faster switching performance
• ±25V gate tolerance allows flexible gate-drive designs
• Surface TDSON package facilitates dense board layout
Applications
• Suitable for high-current polarity switching circuits
• Ideal for power-rail protection and load switching
• Used with motor driver stages requiring P-channel devices
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power modules
• Ideal for power-rail protection and load switching
• Used with motor driver stages requiring P-channel devices
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power modules
What temperature range can it reliably operate within?
It functions from -55°C up to 150°C for wide thermal margin.
How does the pin count affect PCB routing?
Eight pins allow distinct drain, source and gate connectivity for secure thermal and electrical routing.
What standard governs its material specification?
It complies with IEC 61249-2-21 for printed circuit material requirements.
Is it suitable for automotive qualification?
It is not classified as an automotive-grade component.
Which environmental directive does it meet regarding hazardous substances?
It meets RoHS requirements limiting hazardous substance content.
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