Infineon HEXFET N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL
- RS Stock No.:
- 258-0633
- Mfr. Part No.:
- AUIRFR8403TRL
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save HK$13.50
View bulk pricing optionsSubtotal (1 pack of 2 units)*
HK$53.90
FREE delivery for orders over HK$250.00
In Stock
- 2,812 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 8 | HK$26.95 | HK$53.90 | - |
| 10 - 98 | HK$25.60 | HK$51.20 | HK$13.50 |
| 100 - 248 | HK$24.00 | HK$48.00 | HK$295.00 |
| 250 - 498 | HK$22.35 | HK$44.70 | HK$1,150.00 |
| 500 + | HK$20.65 | HK$41.30 | HK$3,150.00 |
*price indicative
- RS Stock No.:
- 258-0633
- Mfr. Part No.:
- AUIRFR8403TRL
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Power Dissipation Pd | 99W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Power Dissipation Pd 99W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252 IRLR6225TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252 IRLR3114ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252 IRFR7446TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V, 4-Pin TO-220