Infineon HEXFET N-Channel MOSFET, 63 A, 100 V Enhancement TO-252 IRLR3110ZTRPBF
- RS Stock No.:
- 257-9453
- Mfr. Part No.:
- IRLR3110ZTRPBF
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$16.18 | HK$80.90 |
| 50 - 95 | HK$15.38 | HK$76.90 |
| 100 - 245 | HK$14.46 | HK$72.30 |
| 250 - 995 | HK$13.46 | HK$67.30 |
| 1000 + | HK$12.38 | HK$61.90 |
*price indicative
- RS Stock No.:
- 257-9453
- Mfr. Part No.:
- IRLR3110ZTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain‑Source Voltage, 63A Maximum Continuous Drain Current - IRLR3110ZTRPBF
This MOSFET is a through‑hole power transistor designed for switching and power‑management roles in circuits requiring high current handling and elevated temperature endurance. It operates as an N‑channel enhancement device rated for medium‑voltage applications and is intended for installations where a TO‑252 package and straightforward PCB mounting are preferred.
Features and Benefits:
• 16mΩ Rds(on) reduces conduction losses during high current flow
• 100V Vds supports medium‑voltage switching applications
• 63A continuous drain current enables sustained heavy‑load operation
• -55°C to +175°C temperature range permits high‑temperature deployment
• 1.3V forward gate voltage allows efficient gate‑drive performance
• 100V Vds supports medium‑voltage switching applications
• 63A continuous drain current enables sustained heavy‑load operation
• -55°C to +175°C temperature range permits high‑temperature deployment
• 1.3V forward gate voltage allows efficient gate‑drive performance
Applications
• Suitable for DC power conversion stages in industrial equipment
• Ideal for motor‑drive switching in Compact assemblies
• Used with power supplies requiring high current throughput
• Can be used for battery management in high‑load systems
• Appropriate for thermal‑stress testing fixtures and rigs
• Ideal for motor‑drive switching in Compact assemblies
• Used with power supplies requiring high current throughput
• Can be used for battery management in high‑load systems
• Appropriate for thermal‑stress testing fixtures and rigs
What package type does it use for board mounting?
It is supplied in a TO‑252 package configured for through‑hole mounting, facilitating mechanical stability and heat dissipation.
What channel behaviour should designers expect?
It functions as an enhancement‑mode N‑channel transistor, requiring a positive gate‑to‑source drive for conduction.
How does temperature capability affect deployment?
The device is specified to operate across a -55°C to +175°C span, allowing use in environments with substantial thermal variation.
Is this component suitable for automotive‑standard projects?
The part is not designated to automotive standards and should not be assumed to meet those specific qualification criteria.
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