Infineon HEXFET N-Channel MOSFET, 7.60 A, 30 V Enhancement PQFN IRLHS6376TRPBF
- RS Stock No.:
- 257-9447
- Mfr. Part No.:
- IRLHS6376TRPBF
- Manufacturer:
- Infineon
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- RS Stock No.:
- 257-9447
- Mfr. Part No.:
- IRLHS6376TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.9W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.9W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 7.60A Maximum Continuous Drain Current - IRLHS6376TRPBF
This MOSFET is an N-channel enhancement-mode transistor designed for switching and power-management roles in electronic systems. It operates across a wide temperature range from -55°C to 150°C and meets RoHS requirements, making it suitable where regulated material standards are required. The device is supplied in a PQFN package intended for through‑hole mounting.
Features and Benefits:
• 63mΩ RDS(on) minimises conduction losses for improved efficiency
• 30V VDS enables low-voltage power switching applications
• 7.60A continuous drain current supports sustained load delivery
• 2.8 nC typical gate charge allows high-speed switching performance
• 4.9W power dissipation manages thermal load within limits
• 30V VDS enables low-voltage power switching applications
• 7.60A continuous drain current supports sustained load delivery
• 2.8 nC typical gate charge allows high-speed switching performance
• 4.9W power dissipation manages thermal load within limits
Applications
• Suitable for low-voltage motor-drive circuitry
• Ideal for power-supply secondary switching stages
• Used for battery-management and DC-DC conversion tasks
• Can be used for telecoms and industrial-control switching
• Appropriate for heat-managed consumer power modules
• Ideal for power-supply secondary switching stages
• Used for battery-management and DC-DC conversion tasks
• Can be used for telecoms and industrial-control switching
• Appropriate for heat-managed consumer power modules
What gate voltage can be applied without damage?
The maximum gate-to-source rating is 12V.
How does thermal tolerance affect deployment?
The device operates from -55°C to 150°C, enabling use in environments with wide temperature variation.
What is the typical switching characteristic relevant to gate-drive design?
The typical total gate charge is 2.8 nC at rated gate-drive conditions.
What package and mounting method are provided for PCB integration?
It is supplied in a PQFN package configured for through‑hole mounting.
Is this device intended for automotive specification use?
It is not designated as compliant with automotive standards.
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