Infineon HEXFET N-Channel MOSFET, 22 A, 20 V Enhancement PQFN IRLHS6242TRPBF
- RS Stock No.:
- 257-9445
- Distrelec Article No.:
- 304-40-550
- Mfr. Part No.:
- IRLHS6242TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 50 more to save 5%
View bulk pricing optionsSubtotal (1 pack of 10 units)*
HK$40.60
FREE delivery for orders over HK$250.00
In Stock
- 810 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | HK$4.06 | HK$40.60 | - |
| 50 - 90 | HK$3.85 | HK$38.50 | 5% |
| 100 - 490 | HK$3.62 | HK$36.20 | 10% |
| 500 - 1990 | HK$3.38 | HK$33.80 | 16% |
| 2000 + | HK$3.12 | HK$31.20 | 23% |
*price indicative
- RS Stock No.:
- 257-9445
- Distrelec Article No.:
- 304-40-550
- Mfr. Part No.:
- IRLHS6242TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 11.70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 9.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 11.70mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 9.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 20V Maximum Drain‑Source Voltage, 22A Maximum Continuous Drain Current - IRLHS6242TRPBF
This MOSFET is a through‑hole enhancement‑mode N‑channel device designed for switching and power‑control tasks. It operates across a wide ambient range and is suited to environments where Compact packaging and appreciable continuous current are required. Key electrical limits and thermal characteristics support integration into assemblies that demand controlled gate drive and moderate power dissipation.
Features and Benefits:
• Low conduction resistance delivers reduced conduction losses
• High continuous current handles heavier load currents
• Moderate gate charge enables reasonably quick switching
• Wide operating temperature range supports harsh environments
• Controlled gate voltage rating protects against drive overvoltage
• High continuous current handles heavier load currents
• Moderate gate charge enables reasonably quick switching
• Wide operating temperature range supports harsh environments
• Controlled gate voltage rating protects against drive overvoltage
Applications
• Suitable for mid‑voltage DC switching and load control
• Ideal for power‑stage components in industrial supplies
• Used with motor‑drive circuits requiring 22A capability
• Can be used for battery management and protection systems
• Appropriate for Compact power converters in PQFN packages
• Ideal for power‑stage components in industrial supplies
• Used with motor‑drive circuits requiring 22A capability
• Can be used for battery management and protection systems
• Appropriate for Compact power converters in PQFN packages
What thermal performance should be expected under load?
It dissipates up to 9.6W, so thermal management such as heatsinking or airflow is required to maintain junction temperatures.
What gate‑drive limits must be observed during design?
The gate‑source voltage must not exceed 12V to avoid overvoltage stress on the input‑gate structure.
How does the device behave across temperature extremes?
It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient temperature swings.
What are the switching characteristics relevant to transient design?
The typical total gate charge is 14 nC at rated gate‑drive conditions, informing gate‑driver sizing and switching‑loss calculations.
Is this device compliant with common environmental directives?
It meets RoHS criteria, indicating the absence of restricted hazardous substances in its construction.
Related links
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN IRLHM620TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN IRLHS6276TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN IRFH6200TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN