Infineon HEXFET N-Channel MOSFET, 95 A, 60 V Enhancement TO-220 IRFB7545PBF
- RS Stock No.:
- 257-9364
- Mfr. Part No.:
- IRFB7545PBF
- Manufacturer:
- Infineon
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HK$359.50
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In Stock
- 800 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$7.19 | HK$359.50 |
| 100 - 450 | HK$6.832 | HK$341.60 |
| 500 + | HK$6.624 | HK$331.20 |
*price indicative
- RS Stock No.:
- 257-9364
- Mfr. Part No.:
- IRFB7545PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 5.90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 5.90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain-Source Voltage, 95A Maximum Continuous Drain Current - IRFB7545PBF
This MOSFET is a through-hole N-channel power transistor designed for switching and high-current applications. It operates in enhancement mode and suits environments requiring a wide operating temperature range. The device comes in a TO-220 package and conforms to RoHS requirements, making it appropriate for assemblies where lead-free compliance is required.
Features and Benefits:
• 5.9mΩ Rds(on) enabling lower conduction losses
• 60V Vds allowing medium-voltage switching capability
• 95A continuous drain current supporting high-current loads
• -55°C to175°C rating for extended temperature operation
• 1.3V forward voltage reducing diode conduction drop
• 60V Vds allowing medium-voltage switching capability
• 95A continuous drain current supporting high-current loads
• -55°C to175°C rating for extended temperature operation
• 1.3V forward voltage reducing diode conduction drop
Applications
• Suitable for power supplies requiring high-current switching
• Ideal for motor-drive stage in industrial controllers
• Used with thermal management for elevated-temperature circuits
• Can be used for general-purpose power transistor replacement
• Used for through-hole prototyping and Durable assemblies
• Ideal for motor-drive stage in industrial controllers
• Used with thermal management for elevated-temperature circuits
• Can be used for general-purpose power transistor replacement
• Used for through-hole prototyping and Durable assemblies
What package and mounting method does it use?
It is supplied in a TO-220 package intended for through-hole mounting.
Which channel type and operating mode are offered?
The device is an N-channel transistor operating in enhancement mode.
Is it suitable for automotive standard requirements?
It is not specified as meeting automotive-standard classifications.
What environmental directive compliance is included?
The component meets RoHS compliance for restricted substances.
Related links
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- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
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