Infineon HEXFET N-Channel MOSFET, 124 A, 100 V Enhancement DirectFET IRF7769L1TRPBF
- RS Stock No.:
- 257-9318
- Mfr. Part No.:
- IRF7769L1TRPBF
- Manufacturer:
- Infineon
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Units | Per unit |
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| 1 - 49 | HK$47.80 |
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- RS Stock No.:
- 257-9318
- Mfr. Part No.:
- IRF7769L1TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 3.50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 3.50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain-Source Voltage, 124A Maximum Continuous Drain Current - IRF7769L1TRPBF
This MOSFET is a through‑hole N‑channel enhancement device designed for high‑current switching in demanding electrical systems. It operates across a wide temperature range suitable for industrial conditions and meets RoHS environmental restrictions. The component is supplied in a DirectFET package intended for applications requiring efficient thermal management and Compact board integration.
Features and Benefits:
• 3.50mΩ RDS(on) reduces conduction losses for higher efficiency
• 100V VDS enables operation in medium‑voltage topologies
• 124A continuous drain current supports high‑power delivery
• VF 1.3V forward voltage assists accurate gate‑to‑source control
• -55°C to +175°C temperature range ensures extended thermal tolerance
• 100V VDS enables operation in medium‑voltage topologies
• 124A continuous drain current supports high‑power delivery
• VF 1.3V forward voltage assists accurate gate‑to‑source control
• -55°C to +175°C temperature range ensures extended thermal tolerance
Applications
• Suitable for power supply and motor control systems
• Used with high‑current DC power distribution racks
• Ideal for industrial converter and inverter stages
• Can be used for battery management and charge regulation
• Used with high‑current DC power distribution racks
• Ideal for industrial converter and inverter stages
• Can be used for battery management and charge regulation
What package type is used for thermal handling?
It uses a DirectFET package to facilitate low thermal resistance and efficient heat transfer.
Which mounting method does it require?
The device is designed for through‑hole mounting to provide robust mechanical and thermal connection.
Is the device suited to automotive qualifications?
It is not specified as an automotive‑standard part and therefore should be evaluated against vehicle‑specific requirements.
What channel polarity and mode are implemented?
The part is an N‑channel device operating in enhancement mode, suitable for common high‑side or low‑side switches.
Does the component comply with environmental directives?
It is RoHS‑compliant, indicating restriction of certain hazardous substances.
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