Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF

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Subtotal (1 pack of 5 units)*

HK$53.20

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Units
Per unit
Per Pack*
5 - 45HK$10.64HK$53.20
50 - 95HK$10.10HK$50.50
100 - 495HK$9.52HK$47.60
500 - 1995HK$8.84HK$44.20
2000 +HK$8.10HK$40.50

*price indicative

Packaging Options:
RS Stock No.:
257-9308
Mfr. Part No.:
IRF7329TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

-7.4A

Maximum Drain Source Voltage Vds

-12V

Series

HEXFET

Package Type

SO-8

Pin Count

8

Maximum Drain Source Resistance Rds

199mΩ

Maximum Gate Source Voltage Vgs

±8 V

Typical Gate Charge Qg @ Vgs

8.1nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

1.75mm

Width

4 mm

Length

5mm

Automotive Standard

No

The Infineon IRF series is the -12V dual p channel HEXFET power mosfet in a SO 8 package.

RoHS Compliant

Low RDS (on)

Dual p channel mosfet

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