Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF

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Subtotal (1 pack of 5 units)*

HK$45.40

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Per Pack*
5 - 45HK$9.08HK$45.40
50 - 95HK$8.62HK$43.10
100 - 495HK$8.12HK$40.60
500 - 1995HK$7.54HK$37.70
2000 +HK$6.92HK$34.60

*price indicative

Packaging Options:
RS Stock No.:
257-9308
Mfr. Part No.:
IRF7329TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-7.4A

Maximum Drain Source Voltage Vds

-12V

Package Type

SO-8

Series

HEXFET

Pin Count

8

Maximum Drain Source Resistance Rds

199mΩ

Typical Gate Charge Qg @ Vgs

8.1nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

±8 V

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.75mm

Length

5mm

Standards/Approvals

RoHS Compliant

Width

4 mm

Automotive Standard

No

The Infineon IRF series is the -12V dual p channel HEXFET power mosfet in a SO 8 package.

RoHS Compliant

Low RDS (on)

Dual p channel mosfet

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