Infineon HEXFET Type N-Channel MOSFET, 131 A, 55 V TO-263 IRF1405STRLPBF

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Subtotal (1 pack of 5 units)*

HK$94.10

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Units
Per unit
Per Pack*
5 - 20HK$18.82HK$94.10
25 - 45HK$17.00HK$85.00
50 - 95HK$16.66HK$83.30
100 - 245HK$14.36HK$71.80
250 +HK$14.04HK$70.20

*price indicative

Packaging Options:
RS Stock No.:
257-9276
Distrelec Article No.:
304-40-516
Mfr. Part No.:
IRF1405STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

131A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.3mΩ

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

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