Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263
- RS Stock No.:
- 257-9273
- Mfr. Part No.:
- IRF1404STRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 800 units)*
HK$6,559.20
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 09 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | HK$8.199 | HK$6,559.20 |
*price indicative
- RS Stock No.:
- 257-9273
- Mfr. Part No.:
- IRF1404STRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-263 IRF1404STRLPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 250 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263