Infineon HEXFET N-Channel MOSFET, 33 A, 150 V Enhancement TO-252 IRFR4615TRLPBF
- RS Stock No.:
- 257-5867
- Mfr. Part No.:
- IRFR4615TRLPBF
- Manufacturer:
- Infineon
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- RS Stock No.:
- 257-5867
- Mfr. Part No.:
- IRFR4615TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 33A Maximum Continuous Drain Current - IRFR4615TRLPBF
This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for PCB mounting in power switching roles. It handles substantial continuous current while operating across a wide ambient temperature range and is suitable where controlled gate drive and thermal management are required.
Features and Benefits:
• 42mΩ Rds(on) reduces conduction losses
• 150V Vds enables high-voltage switching
• 33A continuous current supports heavy loads
• 144W power dissipation allows sustained operation
• 26nC gate charge permits responsive switching
• 150V Vds enables high-voltage switching
• 33A continuous current supports heavy loads
• 144W power dissipation allows sustained operation
• 26nC gate charge permits responsive switching
Applications
• Suitable for high-voltage DC-DC converters
• Ideal for power switching in inverters
• Used with motor-drive stages requiring high current
• Can be used for telecoms power supplies
• Suitable for industrial power management modules
• Ideal for power switching in inverters
• Used with motor-drive stages requiring high current
• Can be used for telecoms power supplies
• Suitable for industrial power management modules
What gate drive limits must be observed?
The gate-to-source rating is ±20V so gate drive amplitudes must remain within that range to avoid damage.
How does thermal performance affect mounting choices?
With a 144W dissipation rating, effective PCB copper areas or heatsinking are required to manage junction temperatures during sustained load.
What temperature extremes can the device tolerate?
It operates over a range from -55°C up to 175°C, allowing use in environments with wide thermal variation.
Is this component suitable for automotive qualification?
It is not specified as automotive-grade
conformity noted is RoHS only.
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK IRFU4615PBF
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK
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